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| Transistors with built-in Resistor UNR2221/2222/2223/2224 (UN2221/2222/2223/2224) Silicon NPN epitaxial planer transistor For digital circuits 0.650.15 2.8 -0.3 +0.2 Unit: mm 0.650.15 1.5 -0.05 +0.25 0.95 2.9 -0.05 1.90.2 +0.2 q 2 s Resistance by Part Number 1.1 -0.1 +0.2 q q q q Marking Symbol UNR2221 9A UNR2222 9B UNR2223 9C UNR2224 9D (R1) 2.2k 4.7k 10k 2.2k (R2) 2.2k 4.7k 10k 10k s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings 50 50 500 200 150 -55 to +150 Unit V V mA mW C C 1:Base 2:Emitter 3:Collector EIAJ:SC-59 Mini Type Package Internal Connection R1 0 to 0.1 0.1 to 0.3 0.40.2 0.8 C B R2 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current UNR2221 UNR2222 UNR2223/2224 E min typ max 1 1 5 Unit A A (Ta=25C) Symbol ICBO ICEO IEBO VCBO VCEO hFE VCE(sat) VOH VOL fT R1 Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 VCE = 10V, IC = 100mA IC = 100mA, IB = 5mA VCC = 5V, VB = 0.5V, RL = 500 VCC = 5V, VB = 3.5V, RL = 500 VCB = 10V, IE = -50mA, f = 200MHz (-30%) 200 2.2 4.7 10 R1/R2 0.8 1.0 0.22 Note) The part numbers in the parenthesis show conventional part number. 1.2 (+30%) k 4.9 0.2 50 50 40 50 60 0.25 V V V MHz 2 1 0.16 -0.06 +0.1 +0.1 q Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 1 0.95 3 1.45 0.4 -0.05 s Features mA Collector to base voltage Collector to emitter voltage Forward current transfer ratio UNR2221 UNR2222 UNR2223/2224 V V Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance UNR2221/2224 UNR2222 UNR2223 Resistance ratio UNR2224 1 Transistors with built-in Resistor Common characteristics chart PT -- Ta 250 UNR2221/2222/2223/2224 Total power dissipation PT (mW) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) Characteristics charts of UNR2221 IC -- VCE 300 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 400 hFE -- IC VCE=10V IB=1.0mA 250 30 10 3 1 Ta=75C 0.3 25C 0.1 0.03 0.01 1 3 10 30 100 300 1000 Collector current IC (mA) 0.9mA 200 0.8mA 0.7mA 150 0.6mA 0.5mA 100 0.4mA 0.3mA 50 0.2mA 0 0 2 4 6 8 0.1mA 10 12 Forward current transfer ratio hFE 300 Ta=75C 200 25C 100 -25C -25C 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 24 10000 f=1MHz IE=0 Ta=25C 3000 IO -- VIN VO=5V Ta=25C VIN -- IO 100 30 VO=0.2V Ta=25C Collector output capacitance Cob (pF) 20 Output current IO (A) 16 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 12 8 4 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 2 Transistors with built-in Resistor Characteristics charts of UNR2222 IC -- VCE 300 100 UNR2221/2222/2223/2224 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 200 VCE=10V hFE -- IC Forward current transfer ratio hFE 30 10 3 1 0.3 0.1 0.03 0.01 -25C Ta=75C 250 Ta=75C 150 25C Collector current IC (mA) IB=1.0mA 200 0.9mA 0.8mA 150 0.7mA 0.6mA 0.5mA 100 0.4mA 0.3mA 50 0.2mA 0.1mA 0 0 2 4 6 8 10 12 100 -25C 25C 50 0 1 3 10 30 100 300 1000 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 12 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C VIN -- IO 100 30 VO=0.2V Ta=25C Collector output capacitance Cob (pF) 10 Output current IO (A) 8 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 6 4 2 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR2223 IC -- VCE 240 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 hFE -- IC 200 VCE=10V Ta=75C 25C 150 30 10 3 1 0.3 0.1 -25C 0.03 0.01 25C 200 160 IB=1.0mA 0.9mA 0.8mA Forward current transfer ratio hFE Collector current IC (mA) 120 0.7mA 0.6mA 80 0.5mA 0.4mA 40 0.3mA 0.2mA 0.1mA 0 0 2 4 6 8 10 12 Ta=75C 100 -25C 50 0 1 3 10 30 100 300 1000 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 3 Transistors with built-in Resistor Cob -- VCB 12 UNR2221/2222/2223/2224 IO -- VIN VIN -- IO VO=5V Ta=25C 100 30 VO=0.2V Ta=25C Collector output capacitance Cob (pF) 10 f=1MHz IE=0 Ta=25C 10000 3000 Output current IO (A) 8 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 6 4 2 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR2224 IC -- VCE 300 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 200 VCE=10V hFE -- IC 250 30 10 3 1 Ta=75C 0.3 25C 0.1 0.03 0.01 Forward current transfer ratio hFE Ta=75C 150 Collector current IC (mA) 25C 200 IB=1.0mA 0.9mA 0.8mA -25C 100 150 0.7mA 0.6mA 0.5mA 0.4mA 100 50 50 0.3mA 0.2mA 0.1mA -25C 0 0 2 4 6 8 10 12 0 1 3 10 30 100 300 1000 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 12 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 1000 300 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 10 Output current IO (A) 8 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 100 30 10 3 1 0.3 0.1 0.1 6 4 2 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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